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 2SB1401
Silicon PNP Triple Diffused
ADE-208-875 (Z) 1st. Edition Sep. 2000 Application
Low frequency power amplifier
Outline
TO-220FM
2
1 1. Base 2. Collector 3. Emitter 55 k (Typ) 3
12 3
2SB1401
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25C. Tj Tstg
1
Ratings -300 -300 -7 -0.3 -0.6 2 15 150 -55 to +150
Unit V V V A A W C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min -300 -300 -7 -- -- -- 1000 1500 -- -- Typ -- -- -- -- -- -- -- -- -- -- Max -- -- -- -10 -10 -10 -- -- -1.5 -2.0 V V Unit V V V A Test conditions I C = -1 mA, IE = 0 I C = -10 mA, RBE = I E = -1 mA, IC = 0 VCB = -300 V, IE = 0 VCE = -60 V, RBE = VEB = -5 V, IC = 0 VCE = -1.5 V, IC = -20 mA*1 VCE = -1.5 V, IC = -100 mA*1 I C = -100 mA, IB = -0.2 mA*1 I C = -100 mA, IB = -0.2 mA*1
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO I EBO DC current transfer ratio hFE1 hFE2 Collector to emitter saturation voltage Base to emitter saturation voltage Note: 1. Pulse test. VCE(sat) VBE(sat)
2
2SB1401
Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) -500 Typical Output Characteristics
-2
TC = 25C
Collector current IC (mA)
-400
40 -1 -100 0 -8 60 -
20
00
-300
-40
-20
-200
A
10
-100 IB = 0
0
50 100 Case temperature TC (C)
150
0
-5 -3 -4 -2 -1 Collector to emitter voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current DC current transfer ratio hFE 10000 VCE = -1.5 V 5000 Pulse C 75 2000 = C Tc 25 C 1000 5 -2 500 200 100 50 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1000 Collector current IC (mA)
Collector to emitter saturation voltage VCE(sat) (V) Base to emitter sauration voltage VBE(sat) (V)
Saturation Voltage vs. Collector Current -10 -5 -2 -1.0 -0.5 -0.2 -0.1 -5 -10 -20 -50 -100 -200 Collector current IC (mA) -500 -1000 VCE(sat) VBE(sat) 500 IC/IB = 200 TC = 25C 200
Transient Thermal Resistance Thermal resistance j-c(C/W)
10
3 TC = 25C
1.0
0.3
0.1 1m
10m
100m
1.0
10
100
1000
Time t (s)
3
2SB1401
Package Dimensions
10.0 0.3 7.0 0.3 3.2 0.2 2.8 0.2 2.5 0.2
Unit: mm
0.6
5.0 0.3
2.0 0.3
1.2 0.2 1.4 0.2
12.0 0.3
4.45 0.3 2.5 14.0 1.0 0.5 0.1
Hitachi Code JEDEC EIAJ Mass (reference value) TO-220FM -- Conforms 1.8 g
0.7 0.1 2.54 0.5 2.54 0.5
4
17.0 0.3
2SB1401
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica Europe Asia Japan
: : : :
http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk
For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
5


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